IndiumV3, Main, Repository, bibRecord, 000177

Compact low driving voltage (<400 mVpp) electro-absorption modulator laterally integrated with VCSEL

Identifieur interne : 000177 ( Main/Repository ); précédent : 000176; suivant : 000178

Compact low driving voltage (<400 mVpp) electro-absorption modulator laterally integrated with VCSEL

Auteurs : RBID : Pascal:14-0068251

Descripteurs français

Pascal (Inist)
- Laser cavité verticale, Laser émission surface, Indice extinction, Basse tension, Optique intégrée, Modulateur électrooptique, Arséniure de gallium, Arséniure d'indium, Semiconducteur III-V, InGaAs, Onde de densité de liaison.

English descriptors

KwdEn :
- Bond order wave, Electrooptical modulator, Extinction index, Gallium arsenides, III-V semiconductors, Indium arsenides, Integrated optics, Low voltage, Surface emitting laser, Vertical cavity laser.

Abstract

An ultra-compact (8 μm long) electro-absorption modulator is presented which is laterally integrated with a 980 nm InGaAs vertical cavity surface emitting laser incorporating a bow-tie-shaped oxide aperture. A low driving voltage operation below 400 mV_pp for a dynamic extinction ratio of 6 dB and a large signal modulation of up to 25 Gbit/s is demonstrated. The static extinction ratio of over 6 dB can be obtained by applying an extremely low voltage of -200 mV.

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Pascal:14-0068251

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Compact low driving voltage (<400 mV<sub>pp</sub>
) electro-absorption modulator laterally integrated with VCSEL</title>
<author><name sortKey="Dalir, H" uniqKey="Dalir H">H. Dalir</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-22, Nagatsutacho</s1>
<s2>Midori-ku, Yokohama 226-8503</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Midori-ku, Yokohama 226-8503</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Takahashi, Y" uniqKey="Takahashi Y">Y. Takahashi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-22, Nagatsutacho</s1>
<s2>Midori-ku, Yokohama 226-8503</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Midori-ku, Yokohama 226-8503</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Koyama, F" uniqKey="Koyama F">F. Koyama</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-22, Nagatsutacho</s1>
<s2>Midori-ku, Yokohama 226-8503</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Midori-ku, Yokohama 226-8503</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Faculty of Science, King Abdulaziz University</s1>
<s2>Jeddah</s2>
<s3>SAU</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Arabie saoudite</country>
<wicri:noRegion>Jeddah</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0068251</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0068251 INIST</idno>
<idno type="RBID">Pascal:14-0068251</idno>
<idno type="wicri:Area/Main/Corpus">000131</idno>
<idno type="wicri:Area/Main/Repository">000177</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0013-5194</idno>
<title level="j" type="abbreviated">Electron. lett.</title>
<title level="j" type="main">Electronics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bond order wave</term>
<term>Electrooptical modulator</term>
<term>Extinction index</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Integrated optics</term>
<term>Low voltage</term>
<term>Surface emitting laser</term>
<term>Vertical cavity laser</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Laser cavité verticale</term>
<term>Laser émission surface</term>
<term>Indice extinction</term>
<term>Basse tension</term>
<term>Optique intégrée</term>
<term>Modulateur électrooptique</term>
<term>Arséniure de gallium</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>InGaAs</term>
<term>Onde de densité de liaison</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">An ultra-compact (8 μm long) electro-absorption modulator is presented which is laterally integrated with a 980 nm InGaAs vertical cavity surface emitting laser incorporating a bow-tie-shaped oxide aperture. A low driving voltage operation below 400 mV<sub>pp</sub>
 for a dynamic extinction ratio of 6 dB and a large signal modulation of up to 25 Gbit/s is demonstrated. The static extinction ratio of over 6 dB can be obtained by applying an extremely low voltage of -200 mV.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0013-5194</s0>
</fA01>
<fA02 i1="01"><s0>ELLEAK</s0>
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<fA03 i2="1"><s0>Electron. lett.</s0>
</fA03>
<fA05><s2>50</s2>
</fA05>
<fA06><s2>2</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Compact low driving voltage (<400 mV<sub>pp</sub>
) electro-absorption modulator laterally integrated with VCSEL</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>DALIR (H.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>TAKAHASHI (Y.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>KOYAMA (F.)</s1>
</fA11>
<fA14 i1="01"><s1>Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259-R2-22, Nagatsutacho</s1>
<s2>Midori-ku, Yokohama 226-8503</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Physics, Faculty of Science, King Abdulaziz University</s1>
<s2>Jeddah</s2>
<s3>SAU</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>101-103</s1>
</fA20>
<fA21><s1>2014</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>12270</s2>
<s5>354000500773050260</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2014 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>11 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>14-0068251</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Electronics letters</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>An ultra-compact (8 μm long) electro-absorption modulator is presented which is laterally integrated with a 980 nm InGaAs vertical cavity surface emitting laser incorporating a bow-tie-shaped oxide aperture. A low driving voltage operation below 400 mV<sub>pp</sub>
 for a dynamic extinction ratio of 6 dB and a large signal modulation of up to 25 Gbit/s is demonstrated. The static extinction ratio of over 6 dB can be obtained by applying an extremely low voltage of -200 mV.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03G02C3</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Laser cavité verticale</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Vertical cavity laser</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Laser cavidad vertical</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Laser émission surface</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Surface emitting laser</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Laser emisión superficie</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Indice extinction</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Extinction index</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Indice extinción</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Basse tension</s0>
<s5>11</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Low voltage</s0>
<s5>11</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Baja tensión</s0>
<s5>11</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Optique intégrée</s0>
<s5>12</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Integrated optics</s0>
<s5>12</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Optica integrada</s0>
<s5>12</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Modulateur électrooptique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Electrooptical modulator</s0>
<s5>14</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Modulador electro-óptico</s0>
<s5>14</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>48</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>48</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Onde de densité de liaison</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Bond order wave</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>097</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Compact low driving voltage (<400 mVpp) electro-absorption modulator laterally integrated with VCSEL

Compact low driving voltage (<400 mVpp) electro-absorption modulator laterally integrated with VCSEL

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri